? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GMA42 gma43 maximum maximum maximum maximum ratings ratings ratings ratings ~? thermal thermal thermal thermal characteristics characteristics characteristics characteristics device device device device marking marking marking marking characteristic ? symbol ? GMA42 gma43 unit collector-emitter voltage ?O - O? v ceo 300 200 vdc collector-base voltage ?O - O? v cbo 300 200 vdc emitter-base voltage lOO? v ebo 6.0 6.0 vdc collector current - continuous O - Bm ic 500 500 madc characteristic ? symbol ? max ? unit total device dissipation ? board(1) t a = 25 h? 25 derat e above25 ^ 25 fp p d 225 1.8 mw mw/ thermal resistance junction to ambient r ja 556 /w total device dissipation ? alumina substrate Xr (2) t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg 150 , -55to+150 GMA42=1d;gma43=m1e
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GMA42 gma43 electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted of?? 25 ) ) ) ) fr-5=1.0 0.75 0.062in. a lumina=0.4 0.3 0.024in.99.5%alumina. p ulse width < 300 u s;duty cycle < 2.0%. characteristic ? symbol ? min ? max ? unit collector-emitter breakdown voltage(3) ?O - O? ( i c =1 m adc , i b =0) v (br)ceo GMA42 gma43 300 200 vdc collector-base breakdown voltage ?O - O? ( i c =100 adc,i e =0) v (br)cbo GMA42 gma43 300 200 __ vdc emitter-base breakdown voltage lO - O? ( i e = 100 adc ,i c =0) v (br)ebo 6.0 vdc emitter cutoff current lO? (v eb =6.0vdc,i c =0) (v eb =4.0vdc,i c =0) i ebo GMA42 gma43 __ 100 100 nadc collector cutoff current ?O? (v cb =200vdc,i e =0) (v cb =160vdc,i e =0) i cbo GMA42 gma43 __ 100 100 nadc dc current gain ? h fe (i c =1.0madc,v ce =10.0vdc) 25 (i c =10madc,v ce =10.0vdc) 40 300 (i c =30madc,v ce =10.0vdc) GMA42 gma43 40 40 __ collector-emitter saturation voltage ?O - lO?? (i c =20madc, i b =2.0madc) v ce(sat) GMA42 gma43 0.5 0.5 vdc base-emitter saturation voltage O - lO?? (i c =20madc, i b =2.0madc) v be(sat) 0.9 vdc current-gain-bandwidth product ?e (i c =10madc,v ce =20vdc,f=100mhz) f t 50 __ mhz collector-base capacitance ? (v cb =20.0vdc, i e =0, f=1.0mhz) c cb GMA42 gma43 __ 3.0 4.0 pf
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. GMA42 gma43 dimension dimension dimension dimension b?
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